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? semiconductor components industries, llc, 2010 april, 2010 ? rev. 5 1 publication order number: bul45d2/d BUL45D2G high speed, high gain bipolar npn power transistor with integrated collector ? emitter diode and built ? in efficient antisaturation network the BUL45D2G is state ? of ? art high speed high gain bipolar transistor (h2bip). high dynamic characteristics and lot ? to ? lot minimum spread ( 150 ns on storage time) make it ideally suitable for light ballast applications. therefore, there is no need to guarantee an h fe window. it?s characteristics make it also suitable for pfc application. features ? low base drive requirement ? high peak dc current gain (55 typical) @ i c = 100 ma ? extremely low storage time min/max guarantees due to the h2bip structure which minimizes the spread ? integrated collector ? emitter free wheeling diode ? fully characterized and guaranteed dynamic v ce(sat) ? ?6 sigma? process providing tight and reproductible parameter spreads ? these devices are pb ? free and are rohs compliant* maximum ratings rating symbol value unit collector ? emitter sustaining voltage v ceo 400 vdc collector ? base breakdown voltage v cbo 700 vdc collector ? emitter breakdown voltage v ces 700 vdc emitter ? base voltage v ebo 12 vdc collector current ? continuous ? peak (note 1) i c i cm 5 10 adc base current ? continuous ? peak (note 1) i b i bm 2 4 adc total device dissipation @ t c = 25 c derate above 25 c p d 75 0.6 w w/ c operating and storage temperature t j , t stg ? 65 to 150 c thermal characteristics characteristics symbol max unit thermal resistance, junction ? to ? case r jc 1.65 c/w thermal resistance, junction ? to ? ambient r ja 62.5 c/w maximum lead temperature for soldering purposes 1/8 from case for 5 seconds t l 260 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. pulse test: pulse width = 5 ms, duty cycle 10%. *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. power transistor 5.0 amperes, 700 volts, 75 watts to ? 220ab case 221a ? 09 style 1 1 http://onsemi.com marking diagram 2 3 BUL45D2G ay ww a = assembly location y = year ww = work week g = pb ? free package device package shipping ordering information BUL45D2G to ? 220 (pb ? free) 50 units / rail
BUL45D2G http://onsemi.com 2 electrical characteristics (t c = 25 c unless otherwise noted) ???????????????????? ???????????????????? characteristic ???? ???? ???? ???? ??? ??? ???? ???? ??? ??? ????????????????????????????????? ????????????????????????????????? ???????????????????? ???????????????????? ???????????????????? collector ? emitter sustaining voltage (i c = 100 ma, l = 25 mh) ???? ???? ???? ???? ???? ???? ??? ??? ??? ???? ???? ???? ??? ??? ??? ???????????????????? ???????????????????? ? base breakdown voltage (i cbo = 1 ma) ???? ???? ???? ???? ??? ??? ???? ???? ??? ??? ???????????????????? ???????????????????? ???????????????????? ? base breakdown voltage (i ebo = 1 ma) ???? ???? ???? ???? ???? ???? ??? ??? ??? ???? ???? ???? ??? ??? ??? ???????????????????? ???????????????????? ???????????????????? ???? ???? ???? ???? ???? ???? ??? ??? ??? ???? ???? ???? ??? ??? ??? adc ??????????????? ??????????????? ??????????????? ?????? ?????? ?????? c @ t c = 125 c @ t c = 125 c ???? ???? ???? ???? ???? ???? ??? ??? ??? ???? ???? ???? ??? ??? ??? adc ???????????????????? ???????????????????? ???????????????????? ? cutoff current (v eb = 10 vdc, i c = 0) ???? ???? ???? ???? ???? ???? ??? ??? ??? ???? ???? ???? ??? ??? ??? adc ????????????????????????????????? ????????????????????????????????? on characteristics ??????????????? ??????????????? ??????????????? base ? emitter saturation voltage (i c = 0.8 adc, i b = 80 madc) ?????? ?????? ?????? c @ t c = 125 c ???? ???? ???? ???? ???? ???? ???? ???? ??? ??? ??? ???? ???? ???? ??? ??? ??? ??? ??? ??????????????? ??????????????? ??????????????? ?????? ?????? ?????? c @ t c = 125 c ???? ???? ???? ??? ??? ??? ???? ???? ???? ??????????????? ??????????????? ??????????????? ? emitter saturation voltage (i c = 0.8 adc, i b = 80 madc) ?????? ?????? ?????? c @ t c = 125 c ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ??? ??? ??? ???? ???? ???? ??? ??? ??? ??? ??? ??? ??? ??? ??????????????? ??????????????? ??????????????? ?????? ?????? ?????? c @ t c = 125 c ???? ???? ???? ??? ??? ??? ???? ???? ???? ??????????????? ??????????????? ??????????????? ??????????????? ?????? ?????? ?????? ?????? c @ t c = 125 c ???? ???? ???? ???? ??? ??? ??? ??? ???? ???? ???? ???? ??????????????? ??????????????? ??????????????? ?????? ?????? ?????? c @ t c = 125 c ???? ???? ???? ???? ???? ???? ???? ???? ??? ??? ??? ???? ???? ???? ??? ??? ??? ??? ??? ??????????????? ??????????????? ??????????????? ?????? ?????? ?????? c @ t c = 125 c ???? ???? ???? ??? ??? ??? ???? ???? ???? ????????????????????????????????? ????????????????????????????????? diode characteristics ??????????????? ??????????????? ??????????????? forward diode voltage (i ec = 1 adc) ?????? ?????? ?????? c @ t c = 125 c ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ??? ??? ??? ???? ???? ???? ??? ??? ??? ??? ??? ??? ??? ??????????????? ??????????????? ??????????????? ?????? ?????? ?????? c @ t c = 125 c ???? ???? ???? ??? ??? ??? ???? ???? ???? ??????????????? ??????????????? ??????????????? ?????? ?????? ?????? c @ t c = 125 c ???? ???? ???? ??? ??? ??? ???? ???? ???? ??????????????? ??????????????? ??????????????? s) ?????? ?????? ?????? c ???? ???? ???? ???? ???? ???? ???? ???? ??? ??? ??? ???? ???? ???? ??? ??? ??? ??? ??? ??????????????? ??????????????? s) ?????? ?????? c ???? ???? ??? ??? ???? ???? ??????????????? ??????????????? s) ?????? ?????? c ???? ???? ??? ??? ???? ????
BUL45D2G http://onsemi.com 3 electrical characteristics (t c = 25 c unless otherwise noted) ??????????????????? ??????????????????? characteristic ???? ???? ???? ???? ???? ???? ???? ???? ??? ??? ????????????????????????????????? ????????????????????????????????? ??????????????????? ??????????????????? ??????????????????? current gain bandwidth (i c = 0.5 adc, v ce = 10 vdc, f = 1 mhz) ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ??? ??? ??? ??????????????????? ??????????????????? ???? ???? ???? ???? ???? ???? ???? ???? ??? ??? ??????????????????? ??????????????????? ??????????????????? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ??? ??? ??? ????????????????????????????????? ????????????????????????????????? dynamic saturation voltage ???????? ???????? ???????? ???????? ???????? ???????? ???????? ???????? dynamic saturation voltage: determined 1 s and 3 s respectively after rising i b1 reaches 90% of final i b1 ????? ????? ????? ????? ???? ???? ???? s ????? ????? ????? c @ t c = 125 c ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ??? ??? ??? ???? ???? s ????? ????? c @ t c = 125 c ???? ???? ???? ???? ???? ???? ??? ??? ????? ????? ????? ????? ????? ???? ???? ???? s ????? ????? ????? c @ t c = 125 c ???? ???? ???? ???? ???? ???? ???? ???? ???? ??? ??? ??? ???? ???? ???? s ????? ????? ????? c @ t c = 125 c ???? ???? ???? ???? ???? ???? ???? ???? ???? ??? ??? ??? ????????????????????????????????? ????????????????????????????????? switching characteristics: resistive load (d.c. 10%, pulse width = 20 s) ???????? ???????? ? on time ???????? ???????? ???????? ???????? ????? ????? c @ t c = 125 c ???? ???? ???? ???? ???? ???? ???? ???? ??? ??? ???????? ???????? ???????? ? off time ????? ????? ????? c @ t c = 125 c ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ??? ??? ??? s ???????? ???????? ???????? ? on time ???????? ???????? ???????? ???????? ????? ????? ????? c @ t c = 125 c ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ??? ??? ??? ???????? ???????? ? off time ????? ????? c @ t c = 125 c ???? ???? ???? ???? ???? ???? ???? ???? ??? ??? s ????????????????????????????????? ????????????????????????????????? switching characteristics: inductive load (v clamp = 300 v, v cc = 15 v, l = 200 h) ???????? ???????? ???????? ???????? ???????? ???????? ???????? ???????? ???????? ????? ????? ????? c @ t c = 125 c ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ??? ??? ??? ???????? ???????? ???????? ????? ????? ????? c @ t c = 125 c ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ??? ??? ??? s ???????? ???????? ????? ????? c @ t c = 125 c ???? ???? ???? ???? ???? ???? ???? ???? ??? ??? ???????? ???????? ???????? ???????? ???????? ???????? ???????? ???????? ???????? ????? ????? ????? c @ t c = 125 c ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ??? ??? ??? ???????? ???????? ???????? ????? ????? ????? c @ t c = 125 c ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ??? ??? ??? s ???????? ???????? ????? ????? c @ t c = 125 c ???? ???? ???? ???? ???? ???? ???? ???? ??? ???
BUL45D2G http://onsemi.com 4 typical static characteristics figure 1. dc current gain @ 1 volt 100 80 60 40 20 0 10 1 0.1 0.01 0.001 i c , collector current (amps) h fe , dc current gain t j = 125 c t j = 25 c t j = -20 c v ce = 1 v figure 2. dc current gain @ 5 volt 100 80 60 40 20 0 10 1 0.1 0.01 0.001 i c , collector current (amps) h fe , dc current gain t j = 125 c t j = 25 c t j = -20 c v ce = 5 v figure 3. collector saturation region 4 2 0 10 0.1 0.01 0.001 i b , base current (amps) i c = 500 ma figure 4. collector ? emitter saturation voltage 10 1 0.1 10 1 0.1 0.01 0.001 i c , collector current (amps) t j = 125 c t j = 25 c t j = -20 c i c /i b = 5 v ce , voltage (volts) v ce , voltage (volts) 3 1 t j = 25 c 1 a 4 a figure 5. collector ? emitter saturation voltage 10 1 0.1 10 0.1 0.01 0.001 i c , collector current (amps) figure 6. collector ? emitter saturation voltage 10 1 0.1 1 0.1 0.01 0.001 i c , collector current (amps) t j = 125 c t j = 25 c t j = -20 c v ce , voltage (volts) v ce , voltage (volts) 1 i c /i b = 10 t j = 125 c t j = 25 c t j = -20 c i c /i b = 20 1 5 a 3 a 2 a 10
BUL45D2G http://onsemi.com 5 typical static characteristics figure 7. base ? emitter saturation region 10 1 0.1 10 0.1 0.01 0.001 i c , collector current (amps) figure 8. base ? emitter saturation region 10 1 0.1 10 0.1 0.01 0.001 i c , collector current (amps) t j = 125 c t j = 25 c t j = -20 c v be , voltage (volts) v be , voltage (volts) 1 t j = 125 c t j = 25 c t j = -20 c i c /i b = 10 1 i c /i b = 5 figure 9. base ? emitter saturation region 10 1 0.1 1 0.1 0.01 0.001 i c , collector current (amps) figure 10. forward diode voltage 10 1 0.1 10 0.1 0.01 reverse emitter-collect or current (amps) 125 c 25 c v be , voltage (volts) forward diode voltage (volts) t j = 125 c t j = 25 c t j = -20 c 1 i c /i b = 20 figure 11. capacitance 1000 10 1 100 10 1 v r , reverse voltage (volts) 100 c ib (pf) c ob (pf) t j = 25 c f (test) = 1 mhz figure 12. bvcer = f(icer) 1000 700 400 1000 100 10 r be ( ) bvcer (volts) t j = 25 c bvcer @ 10 ma 900 800 600 500 bvcer(sus) @ 200 ma 10
BUL45D2G http://onsemi.com 6 typical switching characteristics figure 13. resistive switch time, t on 1000 400 0 4 1.5 0.5 i c , collector current (amps) 3.5 t, time (ns) 800 600 200 t j = 125 c t j = 25 c i c /i b = 10 i c /i b = 5 i bon = i boff v cc = 300 v pw = 20 s 1 2 2.5 3 figure 14. resistive switch time, t off 5 0 i c , collector current (amps) 3 t, time (s) 4 2 1 t j = 125 c t j = 25 c i c /i b = 10 i c /i b = 5 i bon = i boff v cc = 300 v pw = 20 s 4 1.5 0.5 3.5 1 2 2.5 3 figure 15. inductive storage time, t si @ i c /i b = 5 4 2 0 4 1 0 i c , collector current (amps) 3 3 1 t, time (s) 2 t j = 125 c t j = 25 c i bon = i boff v cc = 15 v v z = 300 v l c = 200 h i c /i b = 5 figure 16. inductive storage time, t si @ i c /i b = 10 5 2 0 4 1 0 i c , collector current (amps) 3 3 1 t, time (s) 2 t j = 125 c t j = 25 c i bon = i boff v cc = 15 v v z = 300 v l c = 200 h 4 t, time (ns) figure 17. inductive switching, t c & t fi @ i c /i b = 5 600 200 0 4 1 0 i c , collector current (amps) 3 400 300 100 500 2 t j = 125 c t j = 25 c i bon = i boff v cc = 15 v v z = 300 v l c = 200 h figure 18. inductive switching, t fi @ i c /i b = 10 t c t fi t, time (ns) 400 200 0 4 1 0 i c , collector current (amps) 3 300 100 2 t j = 125 c t j = 25 c i boff = i bon v cc = 15 v v z = 300 v l c = 200 h
BUL45D2G http://onsemi.com 7 typical switching characteristics 1500 0 4 2 0 i c , collector current (amps) figure 19. inductive switching, t c @ i c /i b = 10 5 2 20 5 0 h fe , forced gain 15 4 3 1000 t, time (ns) 500 10 , storage time ( t si s) 13 t j = 125 c t j = 25 c i c = 1 a i boff = i bon v cc = 15 v v z = 300 v l c = 200 h t j = 125 c t j = 25 c i bon = i boff v cc = 15 v v z = 300 v l c = 200 h figure 20. inductive storage time i c = 2 a figure 21. inductive fall time 450 50 20 8 2 h fe , forced gain figure 22. inductive crossover time 1400 400 0 h fe , forced gain 1000 600 200 350 t fi , fall time (ns) t c , crossover time (ns) 250 150 4 6 10 12 t j = 125 c t j = 25 c i c = 1 a i boff = i bon v cc = 15 v v z = 300 v l c = 200 h i bon = i boff v cc = 15 v v z = 300 v l c = 200 h t j = 125 c t j = 25 c i c = 2 a 14 16 18 i c = 2 a 800 20 8 246 1012141618 i c = 1 a figure 23. inductive storage time, t si 3000 0 3 1 0.5 i c , collector current (amps) 2000 t, time (ns) 1000 1.5 i bon = i boff v cc = 15 v v z = 300 v l c = 200 h 2 2.5 i b1 = i b2 i b = 50 ma i b = 100 ma i b = 200 ma i b = 500 ma figure 24. forward recovery time t fr 360 300 2 1 0.5 0 i f , forward current (amp) di/dt = 10 a/ s t c = 25 c 1.5 t fr , forward recovery time (ns) 340 320 3.5 4 i b = 1 a 1200
BUL45D2G http://onsemi.com 8 typical switching characteristics figure 25. dynamic saturation voltage measurements time figure 26. inductive switching measurements 10 4 0 8 2 0 time 6 8 6 2 4 9 7 5 3 1 13 5 7 v ce 0 v i b 90% i b 1 s 3 s dyn 1 s dyn 3 s i b i c v clamp t si t c t fi 90% i c 10% i c 90% i b1 figure 27. t fr measurements 0 10 6 0 v f i f 28 4 10% v clamp v fr (1.1 v f unless otherwise specified) v frm t fr v f 0.1 v f 10% i f
BUL45D2G http://onsemi.com 9 typical switching characteristics table 1. inductive load switching drive circuit v (br)ceo(sus) l = 10 mh r b2 = v cc = 20 volts i c(pk) = 100 ma inductive switching l = 200 h r b2 = 0 v cc = 15 volts r b1 selected for desired i b1 rbsoa l = 500 h r b2 = 0 v cc = 15 volts r b1 selected for desired i b1 +15 v 1 f 150 3 w 100 3 w mpf930 +10 v 50 common -v off 500 f mpf930 mtp8p10 mur105 mje210 mtp12n10 mtp8p10 150 3 w 100 f i out a r b1 r b2 1 f i c peak v ce peak v ce i b i b 1 i b 2 figure 28. forward bias safe operating area 100 0.01 1000 10 v ce , collector-emitter voltage (volts) figure 29. reverse bias safe operating area 6 3 0 800 200 v ce , collector-emitter voltage (volts) 100 1 0.1 i c , collector current (amps) i c , collector current (amps) dc 5 ms 1 ms 10 s 1 s 2 0 v -1.5 v -5 v t c 125 c gain 5 l c = 2 mh 300 400 700 600 5 4 typical characteristics 500 10 1 extended soa
BUL45D2G http://onsemi.com 10 typical characteristics figure 30. forward bias power derating 1 0 160 100 20 t c , case temperature ( c) 0.8 power derating factor 0.6 0.4 0.2 60 140 second breakdown derating 40 80 120 thermal derating there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c ? v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 28 is based on t c = 25 c; t j(pk) is variable depending on power level. second breakdown pulse limits are valid for duty cycles to 10% but must be derated when t c > 25 c. second breakdown limitations do not derate the same as thermal limitations. allowable current at the voltages shown on figure 28 may be found at any case temperature by using the appropriate curve on figure 30. t j(pk) may be calculated from the data in figure 31. at any case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. for inductive loads, high voltage and current must be sustained simultaneously during turn ? off with the base to emitter junction reverse biased. the safe level is specified as a reverse biased safe operating area (figure 29). this rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. typical thermal response figure 31. typical thermal response (z jc (t)) for bul45d2 1 0.01 10 0.1 0.01 t, time (ms) 0.1 1 100 1000 r(t), transient thermal resistance (normalized) r jc (t) = r(t) r jc r jc = 2.5 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) r jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 0.05 single pulse 0.5 0.2 0.1 0.02
BUL45D2G http://onsemi.com 11 package dimensions to ? 220ab case 221a ? 09 issue af style 1: pin 1. base 2. collector 3. emitter 4. collector notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.161 3.61 4.09 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.014 0.025 0.36 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane ? t ? c s t u r j on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. bul45d2/d switchmode is a trademark of semiconductor components industries, llc. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative

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